2SD421 Specs and Replacement

Type Designator: 2SD421

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 700

Noise Figure, dB: -

Package: TO66

 2SD421 Substitution

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2SD421 datasheet

 9.1. Size:204K  inchange semiconductor

 2sd427.pdf pdf_icon

2SD421

isc Silicon NPN Power Transistors 2SD427 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio f... See More ⇒

 9.2. Size:208K  inchange semiconductor

 2sd425.pdf pdf_icon

2SD421

isc Silicon NPN Power Transistors 2SD425 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq... See More ⇒

 9.3. Size:116K  inchange semiconductor

 2sd425 2sd426.pdf pdf_icon

2SD421

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi... See More ⇒

 9.4. Size:208K  inchange semiconductor

 2sd426.pdf pdf_icon

2SD421

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq... See More ⇒

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Detailed specifications: 2SD413, 2SD414, 2SD415, 2SD416, 2SD417, 2SD418, 2SD419, 2SD420, 2N3906, 2SD422, 2SD423, 2SD424, 2SD425, 2SD426, 2SD427, 2SD427S, 2SD428

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