2SD436 Specs and Replacement
Type Designator: 2SD436
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
2SD436 Substitution
- BJT ⓘ Cross-Reference Search
2SD436 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD437 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching regulator applications. ABSOLUTE MAXI... See More ⇒
Detailed specifications: 2SD429, 2SD43, 2SD430, 2SD431, 2SD432, 2SD433, 2SD434, 2SD435, B772, 2SD437, 2SD437W, 2SD438, 2SD438MP, 2SD439, 2SD43A, 2SD44, 2SD445
Keywords - 2SD436 pdf specs
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History: KRA117S
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