2SD437W Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SD437W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO3

2SD437W Transistor Equivalent Substitute - Cross-Reference Search

2SD437W Datasheet (PDF)

8.1. Size:183K inchange semiconductor
2sd437.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD437DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching regulatorapplications.ABSOLUTE MAXI

9.1. Size:405K sanyo
2sd438.pdf