2SD459 Specs and Replacement
Type Designator: 2SD459
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
2SD459 Substitution
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2SD459 datasheet
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD45 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
isc Silicon NPN Power Transistors 2SD458 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
Detailed specifications: 2SD438MP, 2SD439, 2SD43A, 2SD44, 2SD445, 2SD45, 2SD457, 2SD458, SS8050, 2SD46, 2SD460, 2SD461, 2SD463, 2SD464, 2SD465, 2SD466, 2SD467
Keywords - 2SD459 pdf specs
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History: BCAP09C | DTA144WS3 | 2SC2652 | 2T625A-2 | BCW12L | 2T385A-2 | 2T385AM-2
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