2SD474 Datasheet and Replacement
Type Designator: 2SD474
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SD474 Datasheet (PDF)
9.2. Size:32K hitachi
2sd476.pdf 

2SD476(K), 2SD476A(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB566(K) and 2SB566A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD476(K) 2SD476A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage
9.4. Size:208K inchange semiconductor
2sd476n.pdf 

isc Silicon NPN Power Transistors 2SD476NDESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
9.5. Size:150K inchange semiconductor
2sd476 2sd476a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD476 2SD476A DESCRIPTION With TO-220C package Complement to type 2SB566/566A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMET
9.6. Size:184K inchange semiconductor
2sd473.pdf 

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD473DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and
9.7. Size:212K inchange semiconductor
2sd478.pdf 

isc Silicon NPN Power Transistor 2SD478DESCRIPTIONCollector Power Dissipation: P = 30WCCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
9.8. Size:186K inchange semiconductor
2sd470.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD470DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM
Datasheet: 2SD471AG
, 2SD471AO
, 2SD471AY
, 2SD472
, 2SD472H
, 2SD473
, 2SD473H
, 2SD473K
, BC639
, 2SD474K
, 2SD475
, 2SD475A
, 2SD476
, 2SD476A
, 2SD476AK
, 2SD476K
, 2SD477
.
Keywords - 2SD474 transistor datasheet
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2SD474 equivalent finder
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