2SD499 Specs and Replacement
Type Designator: 2SD499
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220
2SD499 Substitution
- BJT ⓘ Cross-Reference Search
2SD499 datasheet
isc Product Specification isc Silicon NPN Power Transistor 2SD492 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switch... See More ⇒
Detailed specifications: 2SD491, 2SD492, 2SD493, 2SD494, 2SD495, 2SD496, 2SD497, 2SD498, 2N3055, 2SD50, 2SD500, 2SD501, 2SD5018, 2SD502, 2SD503, 2SD504, 2SD5041
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