2SD50 Specs and Replacement
Type Designator: 2SD50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SD50 datasheet
0.3. Size:189K inchange semiconductor
2sd5072.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒
0.4. Size:183K inchange semiconductor
2sd504.pdf
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD504 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. A... See More ⇒
0.5. Size:208K inchange semiconductor
2sd5011.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage ... See More ⇒
0.6. Size:188K inchange semiconductor
2sd5074.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5074 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
0.7. Size:188K inchange semiconductor
2sd5075.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5075 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
0.8. Size:189K inchange semiconductor
2sd5071.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5071 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒
0.9. Size:183K inchange semiconductor
2sd506.pdf
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ... See More ⇒
0.10. Size:188K inchange semiconductor
2sd5076.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5076 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
0.11. Size:116K inchange semiconductor
2sd5075t.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo... See More ⇒
0.12. Size:232K inchange semiconductor
2sd5070.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage ... See More ⇒
Detailed specifications: 2SD492, 2SD493, 2SD494, 2SD495, 2SD496, 2SD497, 2SD498, 2SD499, BC548, 2SD500, 2SD501, 2SD5018, 2SD502, 2SD503, 2SD504, 2SD5041, 2SD5041O
Keywords - 2SD50 pdf specs
2SD50 cross reference
2SD50 equivalent finder
2SD50 pdf lookup
2SD50 substitution
2SD50 replacement
