2SD500 Specs and Replacement

Type Designator: 2SD500

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220

 2SD500 Substitution

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2SD500 datasheet

 9.1. Size:85K  usha

2sd5041.pdf pdf_icon

2SD500

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 9.2. Size:207K  jilin sino

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2SD500

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 9.3. Size:189K  inchange semiconductor

2sd5072.pdf pdf_icon

2SD500

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒

 9.4. Size:183K  inchange semiconductor

2sd504.pdf pdf_icon

2SD500

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD504 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. A... See More ⇒

Detailed specifications: 2SD493, 2SD494, 2SD495, 2SD496, 2SD497, 2SD498, 2SD499, 2SD50, TIP41, 2SD501, 2SD5018, 2SD502, 2SD503, 2SD504, 2SD5041, 2SD5041O, 2SD5041P

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