2SD506 Specs and Replacement

Type Designator: 2SD506

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO3

 2SD506 Substitution

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2SD506 datasheet

 ..1. Size:183K  inchange semiconductor

2sd506.pdf pdf_icon

2SD506

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ... See More ⇒

 9.1. Size:85K  usha

2sd5041.pdf pdf_icon

2SD506

Transistors 2SD5041 ... See More ⇒

 9.2. Size:207K  jilin sino

2sd5032.pdf pdf_icon

2SD506

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 9.3. Size:189K  inchange semiconductor

2sd5072.pdf pdf_icon

2SD506

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: 2SD502, 2SD503, 2SD504, 2SD5041, 2SD5041O, 2SD5041P, 2SD5041Q, 2SD505, BC557, 2SD507, 2SD5071, 2SD5074, 2SD5075, 2SD5076, 2SD508, 2SD509, 2SD51

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