2SD511 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD511
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 625 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 250 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: MT11
2SD511 Transistor Equivalent Substitute - Cross-Reference Search
2SD511 Datasheet (PDF)
9.1. Size:181K inchange semiconductor
2sd517.pdf
2sd517.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD517DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
