2SD516 Specs and Replacement
Type Designator: 2SD516
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
2SD516 Substitution
- BJT ⓘ Cross-Reference Search
2SD516 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SD509, 2SD51, 2SD510, 2SD511, 2SD512, 2SD513, 2SD514, 2SD515, 2SC4793, 2SD517, 2SD518, 2SD519, 2SD51A, 2SD52, 2SD520, 2SD521, 2SD522
Keywords - 2SD516 pdf specs
2SD516 cross reference
2SD516 equivalent finder
2SD516 pdf lookup
2SD516 substitution
2SD516 replacement
