2SD51A Specs and Replacement

Type Designator: 2SD51A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 110 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 2SD51A Substitution

- BJT ⓘ Cross-Reference Search

 

2SD51A datasheet

 9.1. Size:181K  inchange semiconductor

 2sd517.pdf pdf_icon

2SD51A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: 2SD512, 2SD513, 2SD514, 2SD515, 2SD516, 2SD517, 2SD518, 2SD519, A940, 2SD52, 2SD520, 2SD521, 2SD522, 2SD523, 2SD524, 2SD525, 2SD525O

Keywords - 2SD51A pdf specs

 2SD51A cross reference

 2SD51A equivalent finder

 2SD51A pdf lookup

 2SD51A substitution

 2SD51A replacement