2SD525Y Specs and Replacement
Type Designator: 2SD525Y
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
2SD525Y Substitution
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2SD525Y datasheet
2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage VCEO=100V Low collector saturation volage VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION ... See More ⇒
isc Silicon NPN Power Transistor 2SD525 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for ... See More ⇒
Detailed specifications: 2SD520, 2SD521, 2SD522, 2SD523, 2SD524, 2SD525, 2SD525O, 2SD525R, 2SD313, 2SD526, 2SD526O, 2SD526R, 2SD526Y, 2SD528, 2SD528H, 2SD529, 2SD52A
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