2SD525Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD525Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
2SD525Y Transistor Equivalent Substitute - Cross-Reference Search
2SD525Y Datasheet (PDF)
2sd525.pdf
2SD525 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti
2sd525.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
2sd525.pdf
isc Silicon NPN Power Transistor 2SD525DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4.0ACE(sat) CComplement to Type 2SB595Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
