2SD526 Specs and Replacement
Type Designator: 2SD526
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SD526 datasheet
..3. Size:167K inchange semiconductor
2sd526.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 E... See More ⇒
0.1. Size:531K semtech
st2sd526.pdf
ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 4 A Collector Current IC 0.4 A Base Current IB O Power Dissipation (Tc = 25 C) PC 30 W O Junctio... See More ⇒
9.1. Size:69K wingshing
2sd525.pdf
2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 40 W Juncti... See More ⇒
9.2. Size:87K jmnic
2sd525.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage VCEO=100V Low collector saturation volage VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION ... See More ⇒
9.3. Size:199K inchange semiconductor
2sd529.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD529 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 320V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in operating in color TV receivers chopper su... See More ⇒
9.4. Size:207K inchange semiconductor
2sd523.pdf
isc Silicon NPN Darlington Power Transistor 2SD523 DESCRIPTION Collector-Emitter Breakdown V =80V(Min.) CE High DC Current Gain- h = 1000(Min.)@I = 3A FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLU... See More ⇒
9.5. Size:213K inchange semiconductor
2sd525.pdf
isc Silicon NPN Power Transistor 2SD525 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for ... See More ⇒
Detailed specifications: 2SD521, 2SD522, 2SD523, 2SD524, 2SD525, 2SD525O, 2SD525R, 2SD525Y, 2SD2499, 2SD526O, 2SD526R, 2SD526Y, 2SD528, 2SD528H, 2SD529, 2SD52A, 2SD53
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