2SD538A Specs and Replacement

Type Designator: 2SD538A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 13 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 2SD538A Substitution

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2SD538A datasheet

 9.1. Size:199K  inchange semiconductor

 2sd535.pdf pdf_icon

2SD538A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD535 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current, high power application... See More ⇒

 9.2. Size:196K  inchange semiconductor

 2sd534.pdf pdf_icon

2SD538A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD534 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters,converters,and other general high-cur... See More ⇒

 9.3. Size:195K  inchange semiconductor

 2sd536.pdf pdf_icon

2SD538A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD536 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters. General... See More ⇒

 9.4. Size:201K  inchange semiconductor

 2sd531.pdf pdf_icon

2SD538A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD531 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.) @ I = 4.0A CE(sat) C With TO-220C Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power ampli... See More ⇒

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Detailed specifications: 2SD531-1, 2SD532, 2SD533, 2SD534, 2SD535, 2SD536, 2SD537, 2SD538, D965, 2SD539, 2SD539A, 2SD53A, 2SD54, 2SD540, 2SD541, 2SD542, 2SD543

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