All Transistors. 2SD539A Datasheet

 

2SD539A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD539A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 13 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 2SD539A Transistor Equivalent Substitute - Cross-Reference Search

   

2SD539A Datasheet (PDF)

 9.1. Size:199K  inchange semiconductor
2sd535.pdf

2SD539A
2SD539A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD535DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high power application

 9.2. Size:196K  inchange semiconductor
2sd534.pdf

2SD539A
2SD539A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD534DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,andother general high-cur

 9.3. Size:195K  inchange semiconductor
2sd536.pdf

2SD539A
2SD539A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD536DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converters.General

 9.4. Size:201K  inchange semiconductor
2sd531.pdf

2SD539A
2SD539A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD531DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.) @ I = 4.0ACE(sat) CWith TO-220C PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power ampli

 9.5. Size:197K  inchange semiconductor
2sd533.pdf

2SD539A
2SD539A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD533DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, conv

Datasheet: 2SD533 , 2SD534 , 2SD535 , 2SD536 , 2SD537 , 2SD538 , 2SD538A , 2SD539 , 2N4401 , 2SD53A , 2SD54 , 2SD540 , 2SD541 , 2SD542 , 2SD543 , 2SD544 , 2SD544-1 .

 

 
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