2SD576 Datasheet and Replacement
Type Designator: 2SD576
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO39
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2SD576 Datasheet (PDF)
2sd570.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD570DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS
2sd577.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD577DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT8157B | BDY17 | BLX20 | CJF715 | KTA1807L | MJH16006 | BD612
Keywords - 2SD576 transistor datasheet
2SD576 cross reference
2SD576 equivalent finder
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History: KT8157B | BDY17 | BLX20 | CJF715 | KTA1807L | MJH16006 | BD612



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