2SD580 Specs and Replacement
Type Designator: 2SD580
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO8
2SD580 Substitution
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2SD580 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD583 DESCRIPTION High Current Capability Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ... See More ⇒
isc Silicon NPN Power Transistor 2SD581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40 60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
isc Silicon NPN Power Transistor 2SD582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 80 100W audio amplifier power output applications. ... See More ⇒
Detailed specifications: 2SD575L, 2SD576, 2SD577, 2SD578, 2SD578A, 2SD579, 2SD579A, 2SD58, A733, 2SD581, 2SD581A, 2SD582, 2SD582A, 2SD583, 2SD585, 2SD586, 2SD586A
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