All Transistors. 2SD581A Datasheet

 

2SD581A Datasheet and Replacement


   Type Designator: 2SD581A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

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2SD581A Datasheet (PDF)

 8.1. Size:205K  inchange semiconductor
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2SD581A

isc Silicon NPN Power Transistor 2SD581DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40~60W audio amplifier power outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:69K  no
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2SD581A

 9.2. Size:181K  inchange semiconductor
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2SD581A

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD583DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL

 9.3. Size:207K  inchange semiconductor
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2SD581A

isc Silicon NPN Power Transistor 2SD582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 80~100W audio amplifier power outputapplications.

Datasheet: 2SD577 , 2SD578 , 2SD578A , 2SD579 , 2SD579A , 2SD58 , 2SD580 , 2SD581 , MJE340 , 2SD582 , 2SD582A , 2SD583 , 2SD585 , 2SD586 , 2SD586A , 2SD587 , 2SD587A .

Keywords - 2SD581A transistor datasheet

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