All Transistors. 2SD582A Datasheet

 

2SD582A Datasheet and Replacement


   Type Designator: 2SD582A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
 

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2SD582A Datasheet (PDF)

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2SD582A

 8.2. Size:207K  inchange semiconductor
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2SD582A

isc Silicon NPN Power Transistor 2SD582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 80~100W audio amplifier power outputapplications.

 9.1. Size:181K  inchange semiconductor
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2SD582A

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD583DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL

 9.2. Size:205K  inchange semiconductor
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2SD582A

isc Silicon NPN Power Transistor 2SD581DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40~60W audio amplifier power outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25

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Datasheet: 2SD578A , 2SD579 , 2SD579A , 2SD58 , 2SD580 , 2SD581 , 2SD581A , 2SD582 , 2N2222A , 2SD583 , 2SD585 , 2SD586 , 2SD586A , 2SD587 , 2SD587A , 2SD588 , 2SD588A .

History: 2SC5948

Keywords - 2SD582A transistor datasheet

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