2SD585 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD585
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO3
2SD585 Transistor Equivalent Substitute - Cross-Reference Search
2SD585 Datasheet (PDF)
2sd583.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD583DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL
2sd581.pdf
isc Silicon NPN Power Transistor 2SD581DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40~60W audio amplifier power outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sd582.pdf
isc Silicon NPN Power Transistor 2SD582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 80~100W audio amplifier power outputapplications.
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
