2SD589 Datasheet and Replacement
Type Designator: 2SD589
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 135 °C
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO3
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2SD589 Datasheet (PDF)
2sd583.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD583DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL
2sd581.pdf

isc Silicon NPN Power Transistor 2SD581DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40~60W audio amplifier power outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sd582.pdf

isc Silicon NPN Power Transistor 2SD582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 80~100W audio amplifier power outputapplications.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | HS649A | 2N2872 | T11
Keywords - 2SD589 transistor datasheet
2SD589 cross reference
2SD589 equivalent finder
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2SD589 replacement
History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | HS649A | 2N2872 | T11



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