2SD596DV5 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD596DV5
SMD Transistor Code: DV5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO236
2SD596DV5 Transistor Equivalent Substitute - Cross-Reference Search
2SD596DV5 Datasheet (PDF)
2sd596.pdf
2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain AL Complementary to 2SB624 33Top ViewC B1MARKING 1 22K EDV4 DPACKAGE INFORMATION H JF GMillimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max
2sd596.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba
2sd596.pdf
2SD596TRANSISTOR (NPN)FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200
2sd596 sot-23-3l.pdf
2SD596 SOT-23-3L Transistor(NPN)1.BASE SOT-23-3L2.EMITTER 2.923.COLLECTOR 0.351.17Features2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
2sd596 sot-23.pdf
2SD596 SOT-23 Transistor(NPN)1.BASE SOT-232.EMITTER 3.COLLECTOR Features High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C
2sd596.pdf
2SD596 Rev.G Apr.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SB624 FEHigh hFE, complementary pair with 2SB624. / Applications Audio frequency amplifier application. / Equivalent Circuit
2sd596.pdf
SMD Type TransistorsNPN Transistors2SD596SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current gain. Complimentary to 2SB6241 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2
2sd596.pdf
2SD596 Silicon Epitaxial Planar TransistorFEATURES Micro package. Complementary to 2SB624 PNP Transistor. High DC current gain h FE:200TYP.(V CE=1.0V,I C =100mA) APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwi
2sd596.pdf
2SD596 TRANSI STOR (NPN)2SD596Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to 2SB624 High DC Current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current IC 700 mACollector Power Dissipa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB705
