2SD596V2 Datasheet and Replacement
Type Designator: 2SD596V2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
2SD596V2 Datasheet (PDF)
2sd596.pdf

2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current gain AL Complementary to 2SB624 33Top ViewC B1MARKING 1 22K EDV4 DPACKAGE INFORMATION H JF GMillimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max
2sd596.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD596 TRANSISTOR (NPN) FEATURES High DC Current gain. 1.BASE Complimentary to 2SB624 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Ba
2sd596.pdf

2SD596TRANSISTOR (NPN)FEATURES High DC Current gain. SOT-23 Complimentary to 2SB624 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.BASE Symbol Parameter Value Units2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: SF829 | 2SD930 | KRA739E | 2N4938 | 2N6556 | UNR5210 | D32W7
Keywords - 2SD596V2 transistor datasheet
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History: SF829 | 2SD930 | KRA739E | 2N4938 | 2N6556 | UNR5210 | D32W7



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