2SD600E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD600E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
2SD600E Transistor Equivalent Substitute - Cross-Reference Search
2SD600E Datasheet (PDF)
2sd600k.pdf
Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K
2sd600.pdf
Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K
2sd600k.pdf
2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEOHigh VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63
2sd600 2sd600k.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mount
2sd600k.pdf
isc Silicon NPN Power Transistor 2SD600KDESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSO
2sd600.pdf
isc Silicon NPN Power Transistor 2SD600DESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLU
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB647L-C
