All Transistors. 2SD600KD Datasheet

 

2SD600KD Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD600KD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126

 2SD600KD Transistor Equivalent Substitute - Cross-Reference Search

   

2SD600KD Datasheet (PDF)

 7.1. Size:115K  sanyo
2sd600k.pdf

2SD600KD
2SD600KD

Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K

 7.2. Size:405K  blue-rocket-elect
2sd600k.pdf

2SD600KD
2SD600KD

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEOHigh VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

 7.3. Size:195K  inchange semiconductor
2sd600 2sd600k.pdf

2SD600KD
2SD600KD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mount

 7.4. Size:214K  inchange semiconductor
2sd600k.pdf

2SD600KD
2SD600KD

isc Silicon NPN Power Transistor 2SD600KDESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSO

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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