All Transistors. 2SD614 Datasheet

 

2SD614 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD614
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: TO5-1

 2SD614 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD614 Datasheet (PDF)

 9.1. Size:238K  sanyo
2sd612.pdf

2SD614
2SD614

 9.2. Size:303K  sanyo
2sd612k.pdf

2SD614
2SD614

Ordering number:341GPNP/NPN Epitaxial Planar Silicon Transistor2SB632, 632K/2SD612, 612K25V/35V, 2A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High collector dissipation and wide ASO.unit:mm2009B[2SB632, 632K/2SD612, 612K]1 : Emitter2 : Collector3 : Base( ) : 2SB632, 632KJEDEC : TO-126SpecificationsAbsolute Maximum Ratings at Ta = 25

 9.3. Size:40K  sanyo
2sd613.pdf

2SD614
2SD614

Ordering number:513HPNP/NPN Epitaxial Planar Silicon Transistor2SB633/2SD61385V/6A, AF 25 to 35W Output ApplicationsFeatures Package Dimensions High breakdown voltage, VCEO85V, high current 6A.unit:mm AF25 to 35W output.2010C[2SB633/2SD613]JEDEC : TO-220AB 1 : Base( ) : 2SB633EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta =

 9.4. Size:27K  sanyo
2sb633p 2sd613p.pdf

2SD614
2SD614

Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec

 9.5. Size:214K  inchange semiconductor
2sd612.pdf

2SD614
2SD614

isc Silicon NPN Power Transistor 2SD612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V(Min.)(BR)CEOHigh Collector DissipationWide Area of Safe OperationComplement to Type 2SB632Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 9.6. Size:201K  inchange semiconductor
2sd612 2sd612k.pdf

2SD614
2SD614

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

 9.7. Size:213K  inchange semiconductor
2sd613.pdf

2SD614
2SD614

isc Silicon NPN Power Transistor 2SD613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOComplement to Type 2SB633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100

 9.8. Size:182K  inchange semiconductor
2sd617.pdf

2SD614
2SD614

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD617DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KS8050L-D | DMC56100

 

 
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