2SD614 Specs and Replacement
Type Designator: 2SD614
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO5-1
- BJT ⓘ Cross-Reference Search
2SD614 datasheet
9.3. Size:40K sanyo
2sd613.pdf 

Ordering number 513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions High breakdown voltage, VCEO85V, high current 6A. unit mm AF25 to 35W output. 2010C [2SB633/2SD613] JEDEC TO-220AB 1 Base ( ) 2SB633 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = ... See More ⇒
9.4. Size:27K sanyo
2sb633p 2sd613p.pdf 

Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec... See More ⇒
9.5. Size:214K inchange semiconductor
2sd612.pdf 

isc Silicon NPN Power Transistor 2SD612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V(Min.) (BR)CEO High Collector Dissipation Wide Area of Safe Operation Complement to Type 2SB632 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
9.6. Size:201K inchange semiconductor
2sd612 2sd612k.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas... See More ⇒
9.7. Size:213K inchange semiconductor
2sd613.pdf 

isc Silicon NPN Power Transistor 2SD613 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min) (BR)CEO Complement to Type 2SB633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100... See More ⇒
9.8. Size:182K inchange semiconductor
2sd617.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD617 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 2SD611A, 2SD612, 2SD612K, 2SD613, 2SD613C, 2SD613D, 2SD613E, 2SD613F, TIP41C, 2SD615, 2SD616, 2SD617, 2SD619, 2SD62, 2SD620, 2SD621, 2SD622
Keywords - 2SD614 pdf specs
2SD614 cross reference
2SD614 equivalent finder
2SD614 pdf lookup
2SD614 substitution
2SD614 replacement