2SD628 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD628
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: TO3
2SD628 Transistor Equivalent Substitute - Cross-Reference Search
2SD628 Datasheet (PDF)
2sd628.pdf
isc Silicon NPN Darlington Power Transistor 2SD628DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(sus)High DC Current Gain-: h = 1000(Min.)@I = 5AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE (sat) CComplement to Type 2SB638Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
2sd627.pdf
isc Silicon NPN Power Transistor 2SD627DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Coll
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 13005SDL
