All Transistors. 2SD634 Datasheet

 

2SD634 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD634

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 8000

Noise Figure, dB: -

Package: TO220

2SD634 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD634 Datasheet (PDF)

1.1. 2sd634.pdf Size:234K _inchange_semiconductor

2SD634
2SD634

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

5.1. 2sd633 2sd635.pdf Size:167K _toshiba

2SD634
2SD634



5.2. 2sd637.pdf Size:46K _panasonic

2SD634
2SD634

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

 5.3. 2sd638 e.pdf Size:44K _panasonic

2SD634
2SD634

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit: mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maxim

5.4. 2sd637 e.pdf Size:51K _panasonic

2SD634
2SD634

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

 5.5. 2sd633-35.pdf Size:127K _mospec

2SD634
2SD634

A A A

5.6. 2sd633 2sd635.pdf Size:86K _inchange_semiconductor

2SD634
2SD634

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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