2SD634 Datasheet and Replacement

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p... See More ⇒

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute ... See More ⇒

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten... See More ⇒

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Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute ... See More ⇒

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD632 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Excellent Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers appl... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD633 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SB673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, p... See More ⇒

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit... See More ⇒