2SD642 PDF and Equivalents Search

 9.1. Size:102K  toshiba

 2sd647 2sd697.pdf

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 9.2. Size:98K  toshiba

 2sd648.pdf

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 9.3. Size:92K  toshiba

 2sd641.pdf

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 9.4. Size:91K  no

 2sd640.pdf

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 9.5. Size:221K  inchange semiconductor

 2sd649.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V... See More ⇒

 9.6. Size:199K  inchange semiconductor

 2sd640.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 5A CE(sat) C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applicatio... See More ⇒

 9.7. Size:205K  inchange semiconductor

 2sd641.pdf

isc Silicon NPN Power Transistor 2SD641 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications. High power amplifier applications. ABSOLUTE MAXI... See More ⇒