2SD645 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD645
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO3A-1
2SD645 Transistor Equivalent Substitute - Cross-Reference Search
2SD645 Datasheet (PDF)
2sd649.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V
2sd640.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 5ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicatio
2sd641.pdf
isc Silicon NPN Power Transistor 2SD641DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High power amplifier applications.ABSOLUTE MAXI
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
