2SD645 Specs and Replacement

Type Designator: 2SD645

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 350 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO3A-1

 2SD645 Substitution

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2SD645 datasheet

 9.1. Size:102K  toshiba

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Detailed specifications: 2SD638, 2SD639, 2SD64, 2SD640, 2SD641, 2SD642, 2SD643, 2SD644, A733, 2SD646, 2SD646A, 2SD647, 2SD647A, 2SD648, 2SD648A, 2SD649, 2SD65

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