2N24 Datasheet and Replacement

   Type Designator: 2N24
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 22
   Noise Figure, dB: -
   Package: TO7

2N24 Substitution

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2N24 Datasheet (PDF)

0.1. Size:319K rca
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2n2482.pdf pdf_icon

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2n2477.pdf pdf_icon

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2n2475.pdf pdf_icon

0.5. Size:647K rca
2n2405.pdf pdf_icon

0.6. Size:178K rca
2n2476.pdf pdf_icon

0.7. Size:3460K 1
2n240.pdf pdf_icon

0.8. Size:339K general electric
2n241 2n141a.pdf pdf_icon

0.9. Size:49K philips
2n2484.pdf pdf_icon

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2484NPN general purpose transistor1997 May 01Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor 2N2484FEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 emitter2 base

0.10. Size:69K central
2n2411 2n2412.pdf pdf_icon

DATA SHEET2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA

0.11. Size:73K central
2n2484 pn2484.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.12. Size:11K semelab
2n2432.pdf pdf_icon

2N2432Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

0.13. Size:10K semelab
2n2412x.pdf pdf_icon

2N2412XDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

0.14. Size:10K semelab
2n2411x.pdf pdf_icon

2N2411XDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

0.15. Size:10K semelab
2n2412bx.pdf pdf_icon

2N2412BXDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, J

0.16. Size:164K isahaya
rt2n24m.pdf pdf_icon

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

0.17. Size:221K cdil
2n2484.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N2484TO-18This transistors is primarily intended for use in high performance, low level, low noise amplifier applicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 60 VCollector -Base Voltage VCBO 60 VEmitter -Base

0.18. Size:331K microsemi
2n2484ua.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484 2N2484UB JAN 2N2484UA 2N2484UBC * JANTX JANTXV

0.19. Size:211K microsemi
2n2432aub.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 DEVICES LEVELS 2N2432 2N2432UB JAN 2N2432A 2N2432AUB JANTX JANTXV AB

0.20. Size:331K microsemi
2n2484ubc.pdf pdf_icon

0.21. Size:211K microsemi
2n2432ub.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 DEVICES LEVELS 2N2432 2N2432UB JAN 2N2432A 2N2432AUB JANTX JANTXV AB

Datasheet: 2N2392 , 2N2393 , 2N2394 , 2N2395 , 2N2396 , 2N2397 , 2N2398 , 2N2399 , 2SC828 , 2N240 , 2N2400 , 2N2401 , 2N2402 , 2N2403 , 2N2404 , 2N2405 , 2N2405L .