2SD675 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD675 Specs and Replacement

Type Designator: 2SD675

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

2SD675 Substitution

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2SD675 datasheet

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isc Silicon NPN Power Transistors 2SD675 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB655 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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2sd679.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl... See More ⇒

9.3. Size:207K inchange semiconductor

2sd673.pdf pdf_icon

isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒