2SD676 Specs and Replacement
Type Designator: 2SD676
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO3
2SD676 Substitution
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2SD676 datasheet
isc Silicon NPN Power Transistors 2SD676 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation- P = 125W(Max)@T =25 C C Complement to Type 2SB656 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl... See More ⇒
isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Detailed specifications: 2SD671, 2SD672, 2SD673, 2SD673A, 2SD674, 2SD674A, 2SD675, 2SD675A, D882P, 2SD676A, 2SD677, 2SD678, 2SD678A, 2SD679, 2SD679A, 2SD68, 2SD680
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