2SD682A Specs and Replacement

Type Designator: 2SD682A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 110 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7000

Noise Figure, dB: -

Package: TO3

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2SD682A datasheet

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2SD682A

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2SD682A

isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High DC Current Gain- h = 500(Min.)@ I = 5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and high power switching applications. Motor driver applications. ABSOLUTE MAXIMUM RATIN... See More ⇒

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Detailed specifications: 2SD679, 2SD679A, 2SD68, 2SD680, 2SD680A, 2SD681, 2SD681A, 2SD682, 2N3904, 2SD683, 2SD683A, 2SD684, 2SD684A, 2SD685, 2SD686, 2SD687, 2SD688

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