2SD683A Specs and Replacement

Type Designator: 2SD683A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO3

 2SD683A Substitution

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2SD683A datasheet

 8.1. Size:206K  inchange semiconductor

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2SD683A

isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High DC Current Gain- h = 500(Min.)@ I = 5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and high power switching applications. Motor driver applications. ABSOLUTE MAXIMUM RATIN... See More ⇒

 9.1. Size:116K  toshiba

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2SD683A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 9.2. Size:78K  toshiba

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2SD683A

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 9.3. Size:207K  inchange semiconductor

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2SD683A

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Detailed specifications: 2SD68, 2SD680, 2SD680A, 2SD681, 2SD681A, 2SD682, 2SD682A, 2SD683, 2N5551, 2SD684, 2SD684A, 2SD685, 2SD686, 2SD687, 2SD688, 2SD689, 2SD69

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