2SD691 Specs and Replacement
Type Designator: 2SD691
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO66
2SD691 Substitution
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2SD691 datasheet
isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒
Detailed specifications: 2SD684A , 2SD685 , 2SD686 , 2SD687 , 2SD688 , 2SD689 , 2SD69 , 2SD690 , 2SA1943 , 2SD692 , 2SD693 , 2SD694 , 2SD695 , 2SD696 , 2SD696A , 2SD697 , 2SD697A .
History: 2SA1020O
Keywords - 2SD691 pdf specs
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History: 2SA1020O
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