2SD697A Specs and Replacement

Type Designator: 2SD697A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 770 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 100 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO3A-1

 2SD697A Substitution

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2SD697A datasheet

 8.1. Size:102K  toshiba

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 9.1. Size:125K  panasonic

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 9.2. Size:86K  panasonic

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 9.3. Size:209K  inchange semiconductor

 2sd692.pdf pdf_icon

2SD697A

isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a... See More ⇒

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Detailed specifications: 2SD691, 2SD692, 2SD693, 2SD694, 2SD695, 2SD696, 2SD696A, 2SD697, TIP42C, 2SD698, 2SD699, 2SD70, 2SD700, 2SD702, 2SD703, 2SD704, 2SD705

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