2SD702 Specs and Replacement

Type Designator: 2SD702

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 2SD702 Substitution

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2SD702 datasheet

 9.1. Size:181K  inchange semiconductor

 2sd705.pdf pdf_icon

2SD702

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒

 9.2. Size:182K  inchange semiconductor

 2sd706.pdf pdf_icon

2SD702

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD706 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒

Detailed specifications: 2SD696, 2SD696A, 2SD697, 2SD697A, 2SD698, 2SD699, 2SD70, 2SD700, 2N2222A, 2SD703, 2SD704, 2SD705, 2SD706, 2SD707, 2SD708, 2SD709, 2SD71

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