2SD706 Specs and Replacement
Type Designator: 2SD706
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 345 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO3
2SD706 Substitution
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2SD706 datasheet
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD706 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE ... See More ⇒
Detailed specifications: 2SD698 , 2SD699 , 2SD70 , 2SD700 , 2SD702 , 2SD703 , 2SD704 , 2SD705 , 2SC2073 , 2SD707 , 2SD708 , 2SD709 , 2SD71 , 2SD710 , 2SD711A , 2SD712 , 2SD712A .
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