All Transistors. 2SD717 Datasheet

 

2SD717 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SD717

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 350 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO247

2SD717 Transistor Equivalent Substitute - Cross-Reference Search

2SD717 Datasheet (PDF)

1.1. 2sd717.pdf Size:88K _wingshing

2SD717

Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector cu

1.2. 2sd717.pdf Size:123K _inchange_semiconductor

2SD717
2SD717

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD717 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Low collector saturation voltage Ў¤ High collector power dissipation APPLICATIONS Ў¤ High power switching applications Ў¤ DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute m

5.1. 2sd718.pdf Size:106K _utc

2SD717
2SD717

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25?) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO

5.2. 2sd718.pdf Size:118K _mospec

2SD717
2SD717

A A A

5.3. 2sd716.pdf Size:89K _wingshing

2SD717

2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector current

5.4. 2sd718.pdf Size:169K _inchange_semiconductor

2SD717
2SD717

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SB688 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPT

5.5. 2sd716.pdf Size:122K _inchange_semiconductor

2SD717
2SD717

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SB686 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and s

5.6. 2sd718_to3p.pdf Size:252K _first_silicon

2SD717
2SD717

SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte

Datasheet: 2SD711A , 2SD712 , 2SD712A , 2SD713 , 2SD715 , 2SD716 , 2SD716O , 2SD716R , BU808DFI , 2SD717O , 2SD717Y , 2SD718 , 2SD718O , 2SD718R , 2SD72 , 2SD720 , 2SD721 .

 


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