2SD720 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD720
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 135 °C
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO3
2SD720 Transistor Equivalent Substitute - Cross-Reference Search
2SD720 Datasheet (PDF)
2sd725.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD725DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sd728.pdf
isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE
2sd726.pdf
isc Silicon NPNPower Transistor 2SD726DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SB690Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sd727.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD727DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching
2sd723.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEODC Current Gain -h = 50(Min)@ I = 0.5AFE CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
