2SD722 Specs and Replacement
Type Designator: 2SD722
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO220
2SD722 Substitution
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2SD722 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SD728 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB692 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE... See More ⇒
Detailed specifications: 2SD717O, 2SD717Y, 2SD718, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721, 8550, 2SD723, 2SD724, 2SD725, 2SD726, 2SD727, 2SD728, 2SD729, 2SD729H
Keywords - 2SD722 pdf specs
2SD722 cross reference
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History: 2SD2549
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