2SD729 Specs and Replacement

Type Designator: 2SD729

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3

 2SD729 Substitution

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2SD729 datasheet

 9.1. Size:38K  no

 2sd721.pdf pdf_icon

2SD729

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 9.2. Size:25K  no

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2SD729

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 9.3. Size:211K  inchange semiconductor

 2sd725.pdf pdf_icon

2SD729

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒

 9.4. Size:213K  inchange semiconductor

 2sd728.pdf pdf_icon

2SD729

isc Silicon NPN Power Transistor 2SD728 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB692 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE... See More ⇒

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Detailed specifications: 2SD721, 2SD722, 2SD723, 2SD724, 2SD725, 2SD726, 2SD727, 2SD728, S9013, 2SD729H, 2SD72K, 2SD73, 2SD730, 2SD73-0, 2SD731, 2SD732, 2SD732K

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