2SD734 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD734
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
2SD734 Transistor Equivalent Substitute - Cross-Reference Search
2SD734 Datasheet (PDF)
2sd734.pdf
Ordering number:512FPNP/NPN Epitaxial Planar Silicon Transistor2SB698/2SD7341W AF Output, Electronic Governor, DC-DC Converter ApplicationsPackage Dimensionsunit:mm2003A[2SB698/2SD734]JEDEC : TO-92 B : Base( ) : 2SB698 for audio 1W output.EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions
2sd731.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD731DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB695Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitch
2sd73.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD73DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching a
2sd730.pdf
INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD730DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 12AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPowe
2sd733 2sd733k.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION With TO-3 package Complement to type 2SB697/697K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simpli
2sd732.pdf
isc Silicon NPN Power Transistor 2SD732DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB696Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co
2sd733.pdf
isc Silicon NPN Power Transistor 2SD733DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB697Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: DDTA113ZCA | KSA542O
History: DDTA113ZCA | KSA542O
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050