2SD73Y
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD73Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20
MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO220
2SD73Y
Transistor Equivalent Substitute - Cross-Reference Search
2SD73Y
Datasheet (PDF)
9.1. Size:102K sanyo
2sd734.pdf 
Ordering number:512FPNP/NPN Epitaxial Planar Silicon Transistor2SB698/2SD7341W AF Output, Electronic Governor, DC-DC Converter ApplicationsPackage Dimensionsunit:mm2003A[2SB698/2SD734]JEDEC : TO-92 B : Base( ) : 2SB698 for audio 1W output.EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions
9.3. Size:206K inchange semiconductor
2sd731.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD731DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB695Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitch
9.4. Size:194K inchange semiconductor
2sd73.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD73DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching a
9.5. Size:185K inchange semiconductor
2sd730.pdf
INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD730DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 12AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPowe
9.6. Size:123K inchange semiconductor
2sd733 2sd733k.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION With TO-3 package Complement to type 2SB697/697K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simpli
9.7. Size:209K inchange semiconductor
2sd732.pdf
isc Silicon NPN Power Transistor 2SD732DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB696Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co
9.8. Size:208K inchange semiconductor
2sd733.pdf
isc Silicon NPN Power Transistor 2SD733DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB697Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co
Datasheet: 2N3200
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