2SD746A
Datasheet and Replacement
Type Designator: 2SD746A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120
W
Maximum Collector-Base Voltage |Vcb|: 220
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 7.5
MHz
Collector Capacitance (Cc): 270
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package:
MT-200
- BJT Cross-Reference Search
2SD746A
Datasheet (PDF)
9.4. Size:152K inchange semiconductor
2sd748 2sd748a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBOHigh power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum
9.5. Size:125K inchange semiconductor
2sd743 2sd743a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s
9.6. Size:214K inchange semiconductor
2sd743.pdf 

isc Silicon NPN Power Transistor 2SD743DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = 0.5AFE CComplement to Type 2SB703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOLUT
9.7. Size:202K inchange semiconductor
2sd748.pdf 

isc Silicon NPN Power Transistor 2SD748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier.Regulator for TV power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Bas
9.8. Size:218K inchange semiconductor
2sd745.pdf 

isc Silicon NPN Power Transistor 2SD745DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SB705High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vol
9.9. Size:194K inchange semiconductor
2sd74.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD74DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching ap
9.10. Size:179K inchange semiconductor
2sd745 2sd745a 2sd745b.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b
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