2SD747 Datasheet and Replacement

   Type Designator: 2SD747
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO39

2SD747 Substitution

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2SD747 Datasheet (PDF)

9.1. Size:174K mospec
2sd743 2sb703.pdf pdf_icon

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9.2. Size:101K no
2sd746.pdf pdf_icon

9.3. Size:30K no
2sd748.pdf pdf_icon

9.4. Size:36K no
2sd741.pdf pdf_icon

9.5. Size:152K inchange semiconductor
2sd748 2sd748a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBOHigh power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum

9.6. Size:125K inchange semiconductor
2sd743 2sd743a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s

9.7. Size:214K inchange semiconductor
2sd743.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD743DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = 0.5AFE CComplement to Type 2SB703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOLUT

9.8. Size:202K inchange semiconductor
2sd748.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier.Regulator for TV power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Bas

9.9. Size:218K inchange semiconductor
2sd745.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD745DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SB705High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vol

9.10. Size:194K inchange semiconductor
2sd74.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD74DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching ap

9.11. Size:179K inchange semiconductor
2sd745 2sd745a 2sd745b.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

Datasheet: 2SD741 , 2SD743 , 2SD743A , 2SD745 , 2SD745A , 2SD745B , 2SD746 , 2SD746A , 2SD882 , 2SD748 , 2SD748A , 2SD749 , 2SD75 , 2SD750 , 2SD751 , 2SD752 , 2SD753 .