All Transistors. 2SD747 Datasheet

 

2SD747 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD747
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO39

 2SD747 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD747 Datasheet (PDF)

 9.1. Size:174K  mospec
2sd743 2sb703.pdf

2SD747 2SD747

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 9.2. Size:101K  no
2sd746.pdf

2SD747 2SD747

 9.3. Size:30K  no
2sd748.pdf

2SD747

 9.4. Size:36K  no
2sd741.pdf

2SD747

 9.5. Size:152K  inchange semiconductor
2sd748 2sd748a.pdf

2SD747 2SD747

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBOHigh power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum

 9.6. Size:125K  inchange semiconductor
2sd743 2sd743a.pdf

2SD747 2SD747

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s

 9.7. Size:214K  inchange semiconductor
2sd743.pdf

2SD747 2SD747

isc Silicon NPN Power Transistor 2SD743DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = 0.5AFE CComplement to Type 2SB703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOLUT

 9.8. Size:202K  inchange semiconductor
2sd748.pdf

2SD747 2SD747

isc Silicon NPN Power Transistor 2SD748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier.Regulator for TV power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Bas

 9.9. Size:218K  inchange semiconductor
2sd745.pdf

2SD747 2SD747

isc Silicon NPN Power Transistor 2SD745DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SB705High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vol

 9.10. Size:194K  inchange semiconductor
2sd74.pdf

2SD747 2SD747

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD74DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching ap

 9.11. Size:179K  inchange semiconductor
2sd745 2sd745a 2sd745b.pdf

2SD747 2SD747

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N3055-8 | BUX93 | BUS52 | 2N5152A | BC338CP | BUV11CECC | 2SD1616AL

 

 
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