2SD75 Specs and Replacement

Type Designator: 2SD75

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO1

 2SD75 Substitution

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2SD75 datasheet

 0.1. Size:128K  panasonic

 2sb713 2sd751.pdf pdf_icon

2SD75

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 0.2. Size:67K  hitachi

 2sd757 2sd758.pdf pdf_icon

2SD75

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 0.3. Size:31K  hitachi

 2sd755 2sd756.pdf pdf_icon

2SD75

2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD755 2SD756 2SD756A Unit Collector to base voltage VCBO 100 120 140 V Collector to emitter vol... See More ⇒

 0.4. Size:207K  inchange semiconductor

 2sd750.pdf pdf_icon

2SD75

isc Silicon NPN Power Transistor 2SD750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT... See More ⇒

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Detailed specifications: 2SD745A, 2SD745B, 2SD746, 2SD746A, 2SD747, 2SD748, 2SD748A, 2SD749, BDT88, 2SD750, 2SD751, 2SD752, 2SD753, 2SD754, 2SD755, 2SD756, 2SD756A

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