All Transistors. 2SD769 Datasheet

 

2SD769 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD769
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

 2SD769 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD769 Datasheet (PDF)

 9.1. Size:36K  hitachi
2sd768.pdf

2SD769
2SD769

2SD768(K)Silicon NPN EpitaxialApplicationMedium speed and power switching complementary pair with 2SB727(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO

 9.2. Size:22K  no
2sd761.pdf

2SD769

 9.3. Size:39K  no
2sd762.pdf

2SD769

 9.4. Size:90K  inchange semiconductor
2sd762 2sd762a.pdf

2SD769
2SD769

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VAL

 9.5. Size:206K  inchange semiconductor
2sd768.pdf

2SD769
2SD769

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD768DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB727Minimum Lot-to-Lot variations for robust deviceperformance and reliable

 9.6. Size:179K  inchange semiconductor
2sd764.pdf

2SD769
2SD769

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD764DESCRIPTIONWith TO-3 PackageHigh Voltage CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.7. Size:212K  inchange semiconductor
2sd762.pdf

2SD769
2SD769

isc Silicon NPN Power Transistor 2SD762DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max.) @I = 2.0ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIM

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DDA124EU | KSA643Y

 

 
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